Title:	Advanced Interface Trap Metrology for Silicon PV
Author(s):	J. D'Amico, M. Wilson, C. Almeida, J. Lagowski, S. Olibet
Keywords:	Passivation, Recombination, Silicon Nitride, Characterisation, Characterization, Interface(s)
Topic:	WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Subtopic:	Silicon Solar Cell Characterisation and Modelling
Event:	28th European Photovoltaic Solar Energy Conference and Exhibition
Session:	2BO.4.5
Pages:	877 - 882
ISBN:	3-936338-33-7
Paper DOI:	10.4229/28thEUPVSEC2013-2BO.4.5
Price:	0,00 EUR
Document(s):	paper, presentation

Abstract/Summary:

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We present an effective solution to a very difficult issue - namely interface trap density, Dit, spectra measurements on silicon PV dielectrics that exhibit large dielectric leakage. To achieve that goal, a noncontact, preparation-free corona C-V technique originally developed for silicon microelectronics is effectively modified regarding hardware and software. Application examples include SiNx, Al2O3, and various dielectric stacks. Results demonstrate significant Dit dependence on 1. dielectric deposition; 2. post-deposition firing; and 3. the interfacial layer. Interface trap mapping, using the present technique, highlights the issue of interface passivation defect nonuniformity denoted by high Dit regions on PV samples and, when compared with effective lifetime mapping, provides a unique site-by-site correlation between surface recombination and the interface trap density.