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Title:
 
p-Type Microcrystalline Sige Window Layer Prepared by VHF-PECVD
 
Author(s):
 
Z. Shang, J. Zhang, L. Zhang, X. Zhang, Z. Hu, G.F. Hou, X. Geng, Y. Zhao
 
Keywords:
 
PECVD, µc-SiGe:H, p-Type, Optical Emission Spectrum (OES)
 
Topic:
 
Thin Films
Subtopic: Amorphous and Microcrystalline Silicon
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 3AV.1.30
 
Pages:
 
2282 - 2284
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-3AV.1.30
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


In this paper, the influence of doping ratio and hydrogen dilution on the structural and electrical characteristics of p-μc-SiGe films was investigated in detail. The results shows that, with the increase of doping ratio, the materials transformed from microcrystalline to amorphous, and the dark conductivity changes little first and then decreases steeply. With the increase of hydrogen dilution, the dark conductivity increases first, then decreases. On the contrary, the active energy decreases first, then increases. The growth kinetics of p-μc-SiGe thin films was explored with optical emission spectra (OES) technique. The results shows that, the ration of SiH*/H* decreased with the increase of doping ratio and increased as the hydrogen dilution decreased. So the crystalline volume fraction of thin films decreased. By optimizing the deposition parameters, p-μc-Si1-xGex thin film with high conductivity, low activation energy (0.67S/cm Eg0.042ev) and high crystalline volume fraction of 51% at the thickness of 32nm was achieved.