Search documents

Browse topics

Document details

Analysis of Annealing and Degradation Effects on a-Si PV Modules
I. Pola, D. Chianese, L. Fanni, R. Rudel
Annealing, Temperature, Amorphous Silicon (a-Si)
Thin Films
Subtopic: Amorphous and Microcrystalline Silicon
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 3AV.1.39
2301 - 2304
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-3AV.1.39
0,00 EUR
Document(s): paper


This study aims to delve into annealing and degradation mechanisms observed for amorphous silicon modules during outdoor operation. Particular interest is devoted to finding optimum conditions for the annealing process, in terms of temperature level and heating period, leading to high efficiency recovery in degraded amorphous silicon modules. The interest to thoroughly investigate the characteristics of these two processes comes from the encouraging results obtained with a thermally insulated a-Si PV plant [1]. Findings showed that the better thermal behaviour and annealing processes of a-Si compared to c-Si technologies compensated a significant part of losses due to the nearly horizontal roof integration. Thus far an analysis on four Riverclack® Elios Deck PV modules has been carried out. Initially the modules have been exposed to outdoor conditions for degradation and subsequently followed different indoor annealing cycles at various temperatures and periods of heating. First results showed important annealing effect already at 80°C and an almost full degradation recovery after heating at 90-100°C for a period of 8-12 hours. Future works aim to study annealing and degradation effects directly on modules installed and monitored outdoors.