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Title:
 
Study of Reduced the P/I Interface Boron Contamination in Single PECVD Chamber Deposition Multicrystalline Silicon Solar Cells
 
Author(s):
 
X.D. Zhang, F.H. Sun, G.H. Wang, S.Z. Xu, Q. Yue, C. Wei, J. Sun, D.K. Zhang, G.F. Hou, X. Geng, S. Xiong, Y. Zhao
 
Keywords:
 
Microcrystalline-Silicon, Thin Film Solar Cell, Boron Contamination, Single Chamber
 
Topic:
 
Thin Films
Subtopic: Amorphous and Microcrystalline Silicon
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 3AV.1.38
 
Pages:
 
2297 - 2300
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-3AV.1.38
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


We studied the boron contamination at the interface between the p and i layers of μc-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. We founded that the mixed-phase μc-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that both a 500-nm thick μc-Si:H covering layer and a 30 seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from cost reduction point of view, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.