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Study of Reduced the P/I Interface Boron Contamination in Single PECVD Chamber Deposition Multicrystalline Silicon Solar Cells
X.D. Zhang, F.H. Sun, G.H. Wang, S.Z. Xu, Q. Yue, C. Wei, J. Sun, D.K. Zhang, G.F. Hou, X. Geng, S. Xiong, Y. Zhao
Microcrystalline-Silicon, Thin Film Solar Cell, Boron Contamination, Single Chamber
Thin Films
Subtopic: Amorphous and Microcrystalline Silicon
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 3AV.1.38
2297 - 2300
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-3AV.1.38
0,00 EUR
Document(s): paper


We studied the boron contamination at the interface between the p and i layers of μc-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. We founded that the mixed-phase μc-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that both a 500-nm thick μc-Si:H covering layer and a 30 seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from cost reduction point of view, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.