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Title:
 
Large Area Low Pressure-Chemical Vapour Deposited ZnO:B for Thin Film Silicon Based Solar Cells
 
Author(s):
 
M.L. Addonizio, C. Diletto, A. Antonaia
 
Keywords:
 
LP-MOCVD, TCO, ZnO:B
 
Topic:
 
Thin Films
Subtopic: Amorphous and Microcrystalline Silicon
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 3AV.1.46
 
Pages:
 
2313 - 2316
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-3AV.1.46
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


This paper has been mainly dedicated to large area deposition of Zinc Oxide (ZnO) thin films by Low Pressure – Metal Organic Chemical Vapour Deposition. A customized apparatus to grow ZnO on 30 x 30 cm2 substrates has been developed in our laboratory, taking care of the design and the realisation of an original reactor geometry with a novel reactant distribution system. ZnO:B material, with a low sheet resistance (< 8 Ω/sq) and with a high transmittance (> 82 %) in the whole wavelength range of photovoltaic interest, has been obtained. A homogeneous light scattering effect on largearea substrate, as a consequence of the uniform surface roughness of the ZnO film, has been achieved. The spatial distributions of both film thickness and sheet resistance have been measured. Since the spatial distribution of these material properties is strongly correlated to the spatial temperature uniformity, growth rate, resistivity and surface texturization have been studied at different deposition temperatures. From our experimental results we deduced that it was possible to select a range of deposition temperatures between 145 ÷ 153 °C where the material properties are quite similar and excellent in terms of transparency, conductivity and texturization.