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Si/SiO2 Quantum Well and Quantum Dot Structures: Atomic-Scale Preparation and Characterization With Respect to Photovoltaic Application
B. Stegemann, D. Sixtensson, T. Lussky, A. Schoepke, M. Schmidt
Photoconductivity, Quantum Well, Quantum Dot
Advanced Photovoltaics
Subtopic: Fundamental Studies
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 1AO.5.3
62 - 65
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-1AO.5.3
0,00 EUR
Document(s): paper


Si/SiO2 single quantum wells and quantum dot layers were prepared under ultrahigh vacuum conditions in order to study their structural, chemical and photo-electrical properties with respect to a possible application in photovoltaic devices. Particular focus is put on the realization of well-defined and abrupt interfaces with low densities of interface gap states. The detection of a photocurrent in these quantum structures is demonstrated. Its spectral dependence correlates with the respective structural properties. Internal quantum efficiencies of photoconductivity and, thus, carrier mobility-lifetime products are strongly affected by Si/SiO2 interface states and were significantly enhanced upon hydrogen treatment due to passivation of interface gap states.