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Thin Film Silicon for Solar Cell Application Grown from Liquid Phase on Metallurgical Grade Silicon
H.G. Svavarsson, D.M. Danielsson, J.T. Gudmundsson
Hydrogen Passivation, Silicon Solar Cell(s), Liquid Phase Epitaxy, Metallurgical Grade Silicon
Thin Films
Subtopic: Thin Film Crystalline Silicon
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 3AV.1.12
2221 - 2223
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-3AV.1.12
0,00 EUR
Document(s): paper


Liquid phase epitaxy was applied to grow roughly 10 μm thick n-type polycrystalline silicon film on p-type metallurgical grade (MG) silicon substrate at 900° C in gallium/indium solution. GaAs, dissolved in the melt, served as an arsenic donor source for the as-grown film. The carrier concentration of both the substrate and the asgrown film was 1 × 1018 cm−3 which is too high for practical photovoltaic applications. A post growth exposure to hydrogen plasma lowered the carrier concentration at the p-n junction by an order of magnitude, resulting in functional photovoltaic devices with an open circuit voltage VOC of up to 480 mV. A morphology study, carried out by scanning electron microscope and atomic force microscope, revealed grain size in the range 1 – 3 mm, reflecting the grain size of the substrate. Our result indicates that usable solar-cells may be prepared from unmodified MG silicon without the costly need of recrystallisation for purification.