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Title:
 
Thin Film Silicon for Solar Cell Application Grown from Liquid Phase on Metallurgical Grade Silicon
 
Author(s):
 
H.G. Svavarsson, D.M. Danielsson, J.T. Gudmundsson
 
Keywords:
 
Hydrogen Passivation, Silicon Solar Cell(s), Liquid Phase Epitaxy, Metallurgical Grade Silicon
 
Topic:
 
Thin Films
Subtopic: Thin Film Crystalline Silicon
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 3AV.1.12
 
Pages:
 
2221 - 2223
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-3AV.1.12
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Liquid phase epitaxy was applied to grow roughly 10 μm thick n-type polycrystalline silicon film on p-type metallurgical grade (MG) silicon substrate at 900° C in gallium/indium solution. GaAs, dissolved in the melt, served as an arsenic donor source for the as-grown film. The carrier concentration of both the substrate and the asgrown film was 1 × 1018 cm−3 which is too high for practical photovoltaic applications. A post growth exposure to hydrogen plasma lowered the carrier concentration at the p-n junction by an order of magnitude, resulting in functional photovoltaic devices with an open circuit voltage VOC of up to 480 mV. A morphology study, carried out by scanning electron microscope and atomic force microscope, revealed grain size in the range 1 – 3 mm, reflecting the grain size of the substrate. Our result indicates that usable solar-cells may be prepared from unmodified MG silicon without the costly need of recrystallisation for purification.