Title:	High-Resolution Electron-Beam Induced Current Imaging of the P-N Junction in Crystalline Silicon on Glass (CSG) Solar Cells
Author(s):	M. Werner, C. Hagendorf, O. Breitenstein, F. Altmann, J. Bagdahn
Keywords:	EBIC, Thin Film Paste, Silicon Solar Cell(s), Electron Microscopy
Topic:	Thin Films
Subtopic:	Thin Film Crystalline Silicon
Event:	23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session:	3AV.1.11
Pages:	2217 - 2220
ISBN:	3-936338-24-8
Paper DOI:	10.4229/23rdEUPVSEC2008-3AV.1.11
Price:	0,00 EUR
Document(s):	paper

Abstract/Summary:

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The p-n junction of crystalline silicon thin film solar cells on glass (CSG material) has been studied in correlation to high-resolution microstructure analysis. Scanning and transmission electron microscopy (SEM/TEM) have been used to study material-related properties like texture, grain structure and layer structure. Complementary information on the p-n junction properties was obtained by high-resolution electron beam induced current (EBIC) imaging. Beside a plan-view EBIC investigation of the surface, a beveled cross sectional preparation has been applied to study the location of the p-n junction in relation to grain structure and thin film topography. The depth of the p-n junction was roughly estimated to less than 150 nm. The crystal and the layer structure of the films have been studied by TEM in greater detail.