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High-Resolution Electron-Beam Induced Current Imaging of the P-N Junction in Crystalline Silicon on Glass (CSG) Solar Cells
M. Werner, C. Hagendorf, O. Breitenstein, F. Altmann, J. Bagdahn
EBIC, Thin Film Paste, Silicon Solar Cell(s), Electron Microscopy
Thin Films
Subtopic: Thin Film Crystalline Silicon
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 3AV.1.11
2217 - 2220
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-3AV.1.11
0,00 EUR
Document(s): paper


The p-n junction of crystalline silicon thin film solar cells on glass (CSG material) has been studied in correlation to high-resolution microstructure analysis. Scanning and transmission electron microscopy (SEM/TEM) have been used to study material-related properties like texture, grain structure and layer structure. Complementary information on the p-n junction properties was obtained by high-resolution electron beam induced current (EBIC) imaging. Beside a plan-view EBIC investigation of the surface, a beveled cross sectional preparation has been applied to study the location of the p-n junction in relation to grain structure and thin film topography. The depth of the p-n junction was roughly estimated to less than 150 nm. The crystal and the layer structure of the films have been studied by TEM in greater detail.