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Solid Phase Crystallized Silicon Thin Films Deposited by High Rate Electron Beam Evaporation: Improved Structural and Electrical Properties
C. Secouard, C. Ducros, P. Roca i Cabarrocas, T. Duffar, B. Gorka, A. Focsa, F. Sanchette
Passivation, Thin Film Paste, Recrystallization, Recrystallisation
Thin Films
Subtopic: Thin Film Crystalline Silicon
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 3AV.1.16
2236 - 2241
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-3AV.1.16
0,00 EUR
Document(s): paper


Structural and electrical properties of solid-phase crystallized amorphous silicon thin films were studied. Silicon layers were deposited onto silicon nitride coated glass substrates by high rate electron beam evaporation. Structure of the films was analyzed by means of X-ray diffraction, transmission electron spectroscopy and electron backscattered diffraction. Amorphous films deposited at 425 °C substrate temperature exhibit enhanced crystallization kinetics, due to optimal medium-range order. Structural investigations carried out on fully crystallized films also revealed larger grain size in these samples, indicating an enhanced growth rate. Electrical properties of the polycrystalline silicon thin films were studied through Hall Effect resistivity and Suns-VOC measurements on mesa diodes. Rapid thermal annealing and hydrogen passivation treatments leaded to significant improvement of the electronic quality of the polycrystalline silicon layers studied in this work with VOC measured on mesa diodes rising from ~130 to 260 mV.