Title:	Rear-Side Contact Structure for Epitaxy Wrap-Through Silicon Thin-Film Solar Cells
Author(s):	E.J. Mitchell, M. Künle, M. Kwiatkowska, S. Janz, S. Reber
Keywords:	Back Contact, Laser Processing, Silicon Carbide
Topic:	Thin Films
Subtopic:	Thin Film Crystalline Silicon
Event:	23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session:	3AV.1.10
Pages:	2212 - 2216
ISBN:	3-936338-24-8
Paper DOI:	10.4229/23rdEUPVSEC2008-3AV.1.10
Price:	0,00 EUR
Document(s):	paper

Abstract/Summary:

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The Epitaxy Wrap-Through (EpiWT) cell is a rear contact version of the Epitaxial Wafer-Equivalent, our crystalline silicon thin-film solar cell. The EpiWT concept is similar to an Emitter Wrap-Through cell but the rear structuring requires an isolation layer. Amorphous silicon carbide layers have been tested using an experimental sample structure. The layer resistivity and pinhole incorporation were measured using different types of metal contacts, and laser-scribed isolation trenches were demonstrated. The results indicate that SiC would be a suitable isolation layer for the EpiWT cell if applied with evaporated metallisation, but the laser trenches require further optimisation.