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Patterning of Thin-Film Silicon Modules Using Lasers With Tailored Beam Shapes and Different Wavelengths
S. Haas, S. Ku, G. Schöpe, K. Du, U. Rau, H. Stiebig
Laser Processing, Thin Film Paste, a-Si:H
Thin Films
Subtopic: Amorphous and Microcrystalline Silicon
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 3AV.2.10
2383 - 2387
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-3AV.2.10
0,00 EUR
Document(s): paper


A detailed analysis of the front contact ablation step and the silicon ablation process for the fabrication of the series interconnection of thin-film silicon modules in superstrate configuration is presented. In this study pulsed lasers with wavelengths of 355 nm and 532 nm were used. The front contact ablation was investigated for zinc oxide as well as for tin dioxide applying an UV-laser from the glass side. As measure of the quality the achieved separation resistance and line profile measurements were used. The silicon ablation step is studied by a green laser with a two dimensional Top-Hat profile. Here the quality of the process was mainly assessed by the contact resistance between front and back contact.