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Influence of Gas Residence Time on High Rate Growth Microcrystalline Silicon Films and Solar Cells
X. Han, G.F. Hou, X.D. Zhang, G. Li, C. Wei, J. Sun, Y. Zhao, X. Geng
Microcrystalline-Silicon, Solar Cell, High Rate, Gas Residence Time
Thin Films
Subtopic: Amorphous and Microcrystalline Silicon
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 3AV.1.51
2332 - 2335
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-3AV.1.51
0,00 EUR
Document(s): paper


A series of μc-Si:H thin films with high deposition rate were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) process under high power and high-pressure conditions. Keeping the other parameters constant, the total gas flow rate was adjusted from 100sccm to 500sccm, which led to gradually decreased gas residence time. The influence of total gas flow rate on the deposition process, electrical and micro-structural properties was studied in detail. Plasma emission was recorded by optical emission spectroscopy during μc-Si:H absorber layer deposition at total gas flow rate between 100sccm and 500sccm. The results showed that the photosensitivity (p/d) of μc-Si:H film was maximum and the microstructure factor (R) was minimum when the ratio of H*/H* had a local minimum value at 300sccm. The above results were analyzed using the concept of the gas residence time. It found that device grade microcrystalline silicon materials should be prepared at proper gas residence time.Those μc-Si:H films deposited at different total gas flow rate were applied as the absorber layers in single-junction μc-Si:H solar cells. Conversion efficiency of 8.11% has been obtained at 8.5Å/s with 300sccm total gas flow rate.