Search documents

Browse topics

Document details

Photovoltaic Grade Microcrystalline Silicon Deposited on Plastic Substrate by Hot Wire CVD
P.A. Frigeri, O. Nos, S. Bengoechea, C. Frevert, M. Stella, A. Antony, J.M. Asensi, J. Bertomeu
Thin Films
Subtopic: Amorphous and Microcrystalline Silicon
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 3AV.2.20
2408 - 2410
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-3AV.2.20
0,00 EUR
Document(s): paper


Thin film silicon deposition technologies provide the possibility of reducing PV module costs due to the lower silicon consumption and the possibility of using plastic substrates for roll-to-roll manufacturing. Two technological requirements to realize this cost cutting are: high deposition rate and low deposition temperature. HWCVD technique is able to produce high quality microcrystalline (μc-Si:H) material by using a cost effective technology, which should be easy to scale up at the industrial levels. We report our results concerning microcrystalline silicon thin films deposited by HWCVD on polyethylene naphtalate (PEN) substrate. In particular, we have developed a HWCVD reactor able to deposit device quality microcrystalline material at low substrate temperature, during several hours and with a relatively high deposition rate. The depositions were carried out without any intentional substrate heating and the low substrate temperature was obtained just using small diameter catalytic filaments which were protected by a cavity system.