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Title:
 
Metallization of Silicon Solar Cells Using ps- and ns-Pulsed Lasers
 
Author(s):
 
D. Munoz-Martin, Y. Chen, M. Morales, C. Molpeceres, M. Grishin
 
Keywords:
 
Laser Processing, Metallization, Metallisation, Laser induced forward transfer
 
Topic:
 
WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Subtopic: Silicon Solar Cell Improvements
Event: 31st European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.4.20
 
Pages:
 
962 - 964
ISBN: 3-936338-39-6
Paper DOI: 10.4229/EUPVSEC20152015-2CV.4.20
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Metallization plays a fundamental role in the fabrication of solar cells and it is then a key process for enhancing the efficiency of silicon solar cells in a cost effective way. In this work, Laser Induced Forward Transfer (LIFT) technique has been used to direct write the metallic contacts (fingers and busbars) onto c-Si cells. Commercial silver pastes, used in conventional screen-printing process, are deposited onto a glass substrate, placed over the cell, and transferred be means of focusing a laser pulse in the interface between the paste and the glass substrate. Standard ns-pulsed diode pumped solid state lasers and new generation ps-pulsed industrial lasers have been used as laser sources for LIFT. Fine parameterization of the process is needed. Single dots of paste have been transfer in a wide parametric window. Once the optima experimental conditions are determined, it is possible using both pulse time durations to transfer large material volumes per pulse (~102 pL) and define metallic lines with large aspect ratios.