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Title:
 
Feasibility Study on the Use of Gen5 PECVD Reactors for Manufacturing of High-Efficiency Silicon Heterojunction Solar Cells
 
Author(s):
 
S. Abolmasov, A. Abramov, D. Andronikov, K. Emtsev, G. Ivanov, I. Nyapshaev, D. Orekhov, A. Semenov, G. Shelopin, E. Terukov, B. Strahm, G. Wahli, P. Papet, T. Söderström, Y. Yao, T. Hengst, G. Kekelidze
 
Keywords:
 
Heterojunction, Silicon (Si), Gen5 KAI PECVD Reactors
 
Topic:
 
THIN FILM SOLAR CELLS AND MODULES
Subtopic: Silicon-based Thin Film and Silicon-Heterojunction Solar Cells and Modules
Event: 31st European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BO.6.6
 
Pages:
 
1046 - 1049
ISBN: 3-936338-39-6
Paper DOI: 10.4229/EUPVSEC20152015-3BO.6.6
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


In this study we evaluate the potential of using Gen5 (1.4 m2) KAI PECVD reactors, originally designed for production of thin film silicon modules, for manufacturing of high-efficiency silicon heterojunction (Si-HJ) solar cells. It is shown that Gen5 KAI PECVD reactors can provide an excellent uniformity of optical and electrical properties of hydrogenated amorphous silicon layers across entire surface of a 110130 cm2 wafer carrier. Surface passivation with low surface recombination velocity (< 4 cm/s) is achieved on n-type FZ c-Si wafers. Si-HJ solar cells, with an efficiency as high as 20.4%, are produced using commercial 6 inch n-type CZ c-Si wafers and Gen5 KAI PECVD reactors. The potential to reach the efficiency above 21% is also demonstrated.