Title:	Experimental Determination of Physical Parameters in II-(III)-VI Thin-Film Solar Modules
Author(s):	B. Werner, W. Kołodenny, A. Dziedzic, T. Zdanowicz
Keywords:	II-VI Semiconductors, Reliability, Modelling / Modeling
Topic:	Components for PV Systems
Subtopic:	PV Modules
Event:	23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session:	4AV.3.36
Pages:	2881 - 2884
ISBN:	3-936338-24-8
Paper DOI:	10.4229/23rdEUPVSEC2008-4AV.3.36
Price:	0,00 EUR
Document(s):	paper

Abstract/Summary:

---

In the paper results of experimentally determined values of diffusion and recombination related components of diode dark saturation corresponding to double-diode model (DEM) for CI(G)S and CdTe are presented. Obtained values result from considering of p-n junction physical basics as well from numerical simulations. Presented examples show a discrepancy between diffusion and recombination dark current components derived using both methods. The reason for this discrepancy is discussed. Work has been partially done within EC-funded BIPV-CIS 6FP project and Internal University Grant (Grant no 12/332116/2008).