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Title:
 
Application of Laser Doped Contact Structure on Multicrystalline Solar Cells
 
Author(s):
 
B. Tjahjono, S. Wang, A. Sugianto, L. Mai, Z. Hameiri, N. Borojevic, A. Ho-Baillie, S.R. Wenham
 
Keywords:
 
Laser Processing, Selective Emitter, Multicrystalline-Silicon
 
Topic:
 
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Cells and Materials, Processing Technology of
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 2DV.1.52
 
Pages:
 
1995 - 2000
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-2DV.1.52
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Formation of selective emitters via the use of laser doping has provided a simple, low cost way of overcoming many of the fundamental performance limitations associated with conventional screen-printed solar cells. A particular strength of the Laser Doped (LD) solar cell concept when applied to multicrystalline wafers is that it can produce localised heavily doped regions without subjecting the entire wafer to high temperature processes. However, the presence of grain boundaries in multicrystalline wafers presents many challenges in LD solar cells, particularly during the laser doping and metal plating processes. The use of stack thin SiO2 underneath SiNx is a possible solution to these problems but it introduces other challenges, such as non-optimum hydrogenation process for bulk passivation. Conversion efficiency over 16% on commercial grade multicrystalline cells has been achieved to date with further room for improvements in the future.