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Advanced Optical Characterization of Industrial PECVD Silicon Nitride Layers
N. Borojevic, Z. Hameiri, S. Winderbaum
PECVD, Silicon Nitride, Characterisation, Characterization
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Solar Cell Characterisation and Modelling
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DO.3.3
519 - 522
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-2DO.3.3
0,00 EUR
Document(s): paper


Deposition of silicon nitride layers on top of silicon wafers using industrial plasma enhanced chemical vapor deposition systems is a major component in today’s manufacturing of silicon solar cells. Previous work has demonstrated non-uniformity in the optical properties within the bulk of dynamically deposited layers using such in-line systems. A gradient in the optical properties within the layer emphasizes the need for optical characterization as a function of the layer’s depth. This paper presents an advanced method to characterize dynamically deposited silicon nitride layers, where the modelling of the experimental ellipsometry spectra is performed by grading of the Tauc-Lorentz optical parameters along the normal of the layer. Significant improvements are demonstrated over the standard, more commonly used Tauc-Lorentz modelling procedure; mainly by revealing of the depth profiles of the layer’s optical properties.