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Impact of Minority Carrier Lifetime and Temperature on SiC Based Rear Contact SiGe Solar Cell for Concentrator Photovoltaic (CPV) Applications
R. Pandey, A. Jain, A. Kumar, R. Chaujar
Solar Cell, Silicon Carbide, Photovoltaic (PV), SiGe, Atlas, Rear Contact
New Materials and Concepts for Solar Cells and Modules
Subtopic: New Materials and Concepts for Cells
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 1BV.6.45
270 - 273
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-1BV.6.45
0,00 EUR
Document(s): paper, poster


In this work, the impact of material quality i.e. impact of minority carrier lifetime on SiC/Si3N4/SiO2 passivated 10μm thick rear contact SiGe solar cell have been obtained. Result shows, the photovoltaic parameters are less affected by minority carrier lifetimes (). Also, as changes from 10-2 s to 10-5 s, change in JSC, VOC, FF and PCE are 0.4%, 0.5%, 2.2% and 3.2%, respectively. Further, the application of rear contact SiGe solar cell for concentrator photovoltaic (CPV) has also been discussed. At 300 K operating temperature, we have obtained the open circuit voltages 627mV, 646mV and power conversion efficiencies of, 15.7%, 16% at 5-sun (0.5 W.cm-2) and 10-sun (1W.cm-2) conditions, respectively for SiC/Si3N4/SiO2 coated SiGe cell. This, results in 6.8 % and 8.8% higher power conversion efficiency (PCE) at the concentration levels of 5, 10 suns compared to 1-sun condition (14.7%, PCE). Also, under 10-sun illumination, 9the PCE of 16.4% and 16.1% at 20oC and 25oC temperature, respectively have been obtained. All the simulation have been done using Silvaco atlas device simulator.