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ITO/n-Si Based Solar Cells: The Influence of Interfaces on Solar Cell Efficiency
A. Simashkevich, L. Bruc, N. Curmei, D. Sherban, M. Rusu, A. Th√łgersen, A. Ulyashin
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Solar Cells Improvements and Innovation
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 2AV.3.37
850 - 853
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-2AV.3.37
0,00 EUR
Document(s): paper


The goal of this work is to demonstrate that heterojunction ITO/Si based solar cells fabricated by non-vacuum spray pyrolysis technique for deposition of indium-tin-oxide (ITO) based layers, can be considered as a promising approach for the cost effective processing of ITO/n-type Si based solar cells. It is established that preparation of an intermediate layer between ITO and Si is a crucial step, which determines efficiencies of ITO/Si based solar cells. Two approaches for the formation of such buffer layer have been considered: (i) chemical etching, which results in a formation of a thin Si porous/ sponge-like ITO/Si interface layer and (ii) low- temperature (~450 C) anneals, which result in a formation of a thin SiOx layer at the ITO/Si interface. A set of analytical characterization methods (SEM, TEM, EELS, EDS) have been used for the analysis of individual ITO layers as well as ITO/Si interfaces. It is established that formation of an ultra-thin SiOx layer at the ITO/Si interface is the most promising route to fabricate heterojunction ITO/Si solar cells with the reasonable (above 14%) efficiencies at a low-cost. General technological trends, which lead to an improvement of the conversion efficiency of ITO/Si solar cells, as well as further steps for optimization and improvement of the low-cost processing routes for ITO/Si solar cells are discussed.