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2D/3D Simulations of Black-Silicon Interdigitated Back-Contacted c-Si(n) Solar Cells
E. Calle, D. Carrió, P. Ortega, G. von Gastrow, H. Savin, I. Martín, R. Alcubilla González
c-Si, Surface Passivation, IBC Solar Cell, 3D Simulations, Black-Silicon
Silicon Photovoltaics
Subtopic: Characterisation & Simulation Methods
Event: 33rd European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.2.37
857 - 860
ISBN: 3-936338-47-7
Paper DOI: 10.4229/EUPVSEC20172017-2CV.2.37
0,00 EUR
Document(s): paper, poster


Black silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the efficiency limits of interdigitated back-contacted c-Si(n) solar cells with line or point contacts respectively, using ALD Al2O3 passivated b-Si in the front surface. Realistic physical and technological parameters involved in a conventional oven-based fabrication process are considered in the simulations, especially those related to surface recombination on the b-Si as well as high doped p+/n+ strip regions. One important issue is the temporal stability of surface passivation on b-Si surfaces. In this work experimental long-term b-Si surface passivation data after two years and its impact on cell performance are studied. Simulations demonstrate initial and final photovoltaic efficiencies over 24.6% and 23.2% respectively for an emitter coverage of 80% independently of the cell contact strategy. A photocurrent loss about 1.3 mA/cm2 occurs when surface recombination velocity at the b-Si surfaces degrades from 6 cm/s to a final value of 28 cm/s.