login

Search documents

Browse topics

Document details

 
Title:
 
Earth-Abundant Thin Film Solar Cells Based on Cu2MnSnS4
 
Author(s):
 
A. Le Donne, S. Binetti, M. Acciarri, S. Marchionna
 
Keywords:
 
Annealing, Manufacturing and Processing, Photoluminescence, PV Materials, Electrical Properties, Thin Film Solar Cell
 
Topic:
 
Thin Film Photovoltaics
Subtopic: CI(G)S, CdTe and Related Thin Film Solar Cells and Modules
Event: 33rd European Photovoltaic Solar Energy Conference and Exhibition
Session: 3CV.1.15
 
Pages:
 
1065 - 1067
ISBN: 3-936338-47-7
Paper DOI: 10.4229/EUPVSEC20172017-3CV.1.15
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


An attractive solution for the preparation of In and Ga free chalcogenides which may allow terawatt range photovoltaic (PV) applications relies on I2-II-IV-VI4 species, such as copper zinc tin sulfide/selenide. A further alternative belonging to this class of materials is Cu2MnSnS4 (CMTS), which consists of abundant and non-toxic elements and shows high absorption coefficient and direct band gap suitable for PV applications. In this work, CMTS thin films were grown on Mo-coated soda lime glasses by a two-step process (evaporation in vacuum of the metal precursors followed by annealing in sulfur vapors). SLG/Mo/Sn/Cu/Mn stack structures were sulfurized at 585°C with an initial step at 115°C to enhance the metal intermixing, paying particular attention to the control of Mn/Sn ratio and to the effect of different annealing ramping rate. Some proof of concept PV device based on Cu-poor/Mnrich CMTS samples were prepared and tested (efficiency 0.6%, open-circuit voltage 303 mV, short-circuit current density 5.1 mA/cm2, fill factor 38.5%). The beneficial effects of low temperature post-deposition annealing were also investigated, which provided literature record performance (efficiency 0.83%, open-circuit voltage 354 mV, shortcircuit current density 5.8 mA/cm2, fill factor 40%).