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Title:
 
High-Efficiency Silicon Solar Cells with Intrinsic and Doped A-SiCx Rear Side Passivation
 
Author(s):
 
D. Suwito, S. Janz, M. Hermle, S.W. Glunz
 
Keywords:
 
Surface Passivation, Silicon Carbide, High Efficiency Silicon Solar Cells
 
Topic:
 
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Materials and Cells
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 2DV.1.61
 
Pages:
 
2197 - 2201
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-2DV.1.61
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


a-SiCx films are used for the electrical passivation of the rear surface of high-efficiency PERC silicon solar cells. The films comprise intrinsic as well as n- and p-doped SiCx layers prepared by adding PH3 or B2H6 to the precursor gases during the Plasma Enhanced Chemical Vapor Deposition (PECVD) process. Two different rear contacting approaches, Laser Fired Contacts (LFC) and plasma etched rear openings with subsequent aluminium evaporation, are used to reveal the impact of the different rear passivation schemes on the solar cell performance. The results indicate that intrinsic and lightly n-doped SiCx layers are well suited for the passivation of highefficiency silicon solar cells, yielding cell efficiencies of up to 20.7%. Furthermore the floating junction behavior of the n-SiCx passivation scheme could be verified, leading to a complete depassivation of the rear side in the case of the LFC approach due to shunting of the rear diode by the aluminium contacts.