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Auger Recombination Impact for Limiting Efficiency of Silicon Solar Cells
J. Lee, M.K. Cotton, Y. Zou, S.Y. Herasimenka, C.B. Honsberg
Silicon (Si), Detailed Balance, Auger Generation/Recombination, Multiple Exciton Generation
Silicon Photovoltaics
Subtopic: Characterisation & Simulation Methods
Event: 33rd European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.2.34
849 - 852
ISBN: 3-936338-47-7
Paper DOI: 10.4229/EUPVSEC20172017-2CV.2.34
0,00 EUR
Document(s): paper


The detailed balance equations including material parameters are important to predict the theoretical efficiency for specific materials. The temperature dependence of recombination processes in silicon solar cell are discussed due to sensitivity of electrical parameters with single junction and multiple exciton generation solar cells (MEGSC). Among these characteristics, the impact of Auger recombination (AR) is significant in high doping or high injection level so that the effects of AR are applied into the detailed balance equations of silicon solar cells for single junction and multiple exciton generation concept. After we parameterize the material properties, the temperature sensitivity of the open circuit voltage shows as the most significant impact to the efficiency. Further, we investigate various Auger coefficient modeling to see the effect of temperature sensitivity. After detailed analyzation, we could also find the potential benefits of using MEGSC in comparison to SJ approaches.