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Silicon Powder Based Ingots and Substrates, Processed by Spark Plasma Sintering
T. Kaden, A.S. Azar, M. Syvertsen, H.J. Möller, N. Abrosimov, M. Fleissner Sunding, J. Hennicke, A. Ulyashin
Wafering, Diamond Wire, Multicrystalline Silicon, Silicon
Silicon Photovoltaics
Subtopic: Feedstock, Crystallisation, Wafering, Defect Engineering
Event: 33rd European Photovoltaic Solar Energy Conference and Exhibition
Session: 2AV.1.19
513 - 516
ISBN: 3-936338-47-7
Paper DOI: 10.4229/EUPVSEC20172017-2AV.1.19
0,00 EUR
Document(s): paper


This work presents results concerning sintering of silicon powder based wafers and ingots produced the by Spark Plasma Sintering (SPS) method. It is shown that wafering of such ingots can be done by conventional wire sawing. Light microscopy, scanning electron microscopy, energy dispersive spectroscopy, Raman spectroscopy, as well as minority carrier life time measurements were used for the analysis of silicon wafers fabricated by SPS followed by wire sawing. It is found that during the SPS process, material inhomogeneity of sintered ingots and wafers occurs. Nevertheless, the inhomogeneity can be smoothed by proper optimized sintered conditions for the large scale (up to 8 inch) ingots and wafers. It is found that the SPS process, being applied to Si powder, provides formation of Si material (wafers or ingots), which has structural properties similar to those for multicrystalline silicon (mc-Si). In case if silicon powder has solar grade quality, minority carrier lifetime values are comparable with those for mc-Si substrates. It is concluded that SPS silicon structures can be potentially considered as a base for low-cost Si based photovoltaics.