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Overcoming Over-Plating Problems on Acid Textured Multicrystalline Wafers with Silicon Nitride Coated Surfaces
S. Wang, T. Puzzer, B. Vogl, B. Tjahjono, B. Hallam, M. Eadie, N. Borojevic, Z. Hameiri, S. Wenham
Silicon Nitride, Metallization, Metallisation, Multicrystalline-Silicon
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Materials and Cells
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 2CV.2.12
1449 - 1452
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-2CV.2.12
0,00 EUR
Document(s): paper


Effective self-aligned electroless plating metallisation schemes have been well known and quantified for many decades. The electroless plating technique works well in conjunction with several selective emitter technologies on monocrystalline wafers such as laser doped, buried contact and inkjet printed design features to achieve low contact resistance of the final device. However, applying the electroless plating technique on standard acid textured multicrystalline wafers with a silicon nitride coated surface can be relatively challenging. There are two main causes of over-plating on acid textured multi-crystalline wafers with silicon nitride coated surfaces: the nature of PECVD SiNx deposition itself and the topology of wafer surfaces. In addition to increased shading losses, overplating can cause shunting mechanisms or form Schottky contacts. Consequently, the overall performance of the solar cell is reduced. In this work, the origins of over-plating problems are examined and several solutions are evalutated. Finally, multicrystalline wafers without excess plating on the surface are demonstrated.