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Coupling Effects in InGaP/InGaAs/Ge Triple Junction PV Cells of Different Structures
V. Paraskeva, N. Armani, A. Malchiodi, F. Trespidi, G. Timò, A. Livera, G.E. Georghiou
Photoluminescence, Multi-Junction Solar Cell, Concentrator Cells
Concentrator and Space Photovoltaics
Subtopic: III-V-Based Devices for Terrestrial and Space Applications
Event: 35th European Photovoltaic Solar Energy Conference and Exhibition
Session: 4BV.4.4
973 - 977
ISBN: 3-936338-50-7
Paper DOI: 10.4229/35thEUPVSEC20182018-4BV.4.4
0,00 EUR
Document(s): paper, poster


Photoluminescence spectroscopy with contemporary two excitation lasers of different wavelength was used to demonstrate the impact of the structure of the solar cells on the coupling effects. Cells with AlInGaAs/InGaAs heterojunction and higher spacer thickness in the middle junction were found to enhance coupling between the top and middle junction. In the presence of varying NIR power and fixed green laser power both the top junction integrated luminescence and the short-circuit current of the device start to plateau at the same NIR power, thus demonstrating the transition of the current limiting junction in the device and particularly the transition from the middle to the top current limiting junction.