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The Use of Silicon Oxynitride on Laser Doped Multicrystalline Silicon Solar Cells
S. Wang, B. Tjahjono, B. Hallam, B. Vogl, M. Eadie, A. Sugianto, L. Mai, Z. Hameiri, S. Wenham
Laser Processing, Multicrystalline-Silicon, Silicon Oxynitride
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Materials and Cells
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 2CV.2.58
1632 - 1635
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-2CV.2.58
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Document(s): paper


The use of Laser Doping technology to form a selective emitter on solar cells has proven to be simple, cost effective, and suitable for commercial production. Efficiencies in excess of 18% have consistently been demonstrated on industrial grade p-type CZ wafers. One of the most important aspects of the laser doping technology is to provide localised heavily doped regions without subjecting the entire wafer to high temperature processing. This feature facilitates its suitability for fabricating multicrystalline solar cells. Multicrystalline wafer material often degrades at high processing temperature. Nevertheless, there are still several challenges in adapting the laser doping concept to multicrystalline wafers, particularly due to the presence of grain boundaries. The front anti-reflection coating must not only allow the hydrogenation effect to take place in passivating the bulk material but also protect the wafers against laser induced defects and be sufficiently dense to act as a plating mask. In this work, double stack layers of silicon oxy-nitride and silicon nitride (SiNx) are used as anti-reflection coating for the front surface. The passivation effects of these stacked layers, along with its ability to withstand laser induced defects will be discussed in this paper. Reflection properties of the silicon oxy-nitride single layer and the silicon oxy-nitride/silicon nitride double stack layers antireflection coatings are examined.