login

Search documents

Browse topics

Document details

 
Title:
 
Atmospheric Pressure Chemical Vapor Deposition of In-Situ Doped Amorphous Silicon Layers for Passivating Contacts
 
Author(s):
 
A. Merkle, S. Seren, H. Knauss, B. Min, J. Steffens, B. Terheiden, R. Brendel, R. Peibst
 
Keywords:
 
Polycrystalline, Amorphous Silicon (a-Si), Silicon (Si) Solar Cells, Passivating Contact, Carrier Selectivity
 
Topic:
 
Silicon Cells
Subtopic: Manufacturing & Production of Si Cells
Event: 35th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.49
 
Pages:
 
785 - 791
ISBN: 3-936338-50-7
Paper DOI: 10.4229/35thEUPVSEC20182018-2DV.3.49
 
Price:
 
 
0,00 EUR
 
Document(s): paper, poster
 

Abstract/Summary:


Atmospheric Pressure Chemical Vapor Deposition (APCVD) is so far used for the deposition of doped and undoped oxides. We upgrade an industrial in-line APCVD tool from Schmid Thermal Systems and develop potential cost-effective APCVD processes for deposition of intrinsic and in-situ-doped amorphous silicon (a-Si) layers. In this work we report for the first time on in-situ phosphorus-doped n+-type and boron-doped p+-type APCVD silicon layers. For n+-type and p+-type polysilicon on oxide (POLO) junctions based on these layers we demonstrate saturation current densities J0 < 6 fA/cm², implied open circuit voltages iVoc of 721 mV and 730 mV respectively, and simultaneously low junction resistivity c of 18 mΩcm². These properties enable the implementation of these layers as carrier-selective passivating contacts in solar cells. First industrial proof-of-concept solar cells using boron-doped p+- type APCVD layers are presented. We show that the p+-type APCVD POLO junction formation is possible by firing only and present an industrial feasible cell process for its drop-in implementation in current passivated emitter and rear cell (PERC) process flow.