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Probing Photoinduced Degradation of CH3NH3PbI3 Perovskite Films by Kelvin Probe and Photoluminescence Techniques
A. Peter Amalathas, L. Abelová, B. Conrad, B. Dzurnak, M. Ledinsky, J. Holovsky
Degradation, Photoluminescence, Kelvin Probe, Perovskite, Fermi Level
Non Silicon-Based Thin Film Photovoltaics
Subtopic: Perovskite, Organic and Dye-Sensitised Devices
Event: 35th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3DO.4.5
856 - 859
ISBN: 3-936338-50-7
Paper DOI: 10.4229/35thEUPVSEC20182018-3DO.4.5
0,00 EUR
Document(s): paper


In this work, the photoinduced degradation of CH3NH3PbI3 perovskite films under illumination in ambient conditions (relative humidity 30-50%) was studied by Kelvin Probe and Photoluminescence techniques. Using Kelvin Probe techniques, we investigated the effects on the work function of the CH3NH3PbI3 film on fluorine-doped SnO2 (FTO) at various photoinduced degradation states in the dark and under illumination. It was found that the work function of CH3NH3PbI3 film on FTO was gradually increased in the dark after every 10 min illumination step until the film was completely degraded. The gradual increase in work function due to the degradation can be ascribed to modulation doping of the CH3NH3PbI3 by PbI2 phase. It was also found that the contact potential difference (CPD) of CH3NH3PbI3 on FTO was increased under illumination as a result of a positive surface photovoltage relative to the FTO. The steady-state photoluminescence (PL) and time-resolved PL measurements show that photoinduced degradation of CH3NH3PbI3 leads to different charge carrier dynamics, as the localized defects and vacancies are increased during the degradation.