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Change of the Bulk Carrier Lifetime of High Quality Silicon Wafers during PERC Solar Cell Processing
M. Müller, F. Wolny, G. Fischer, A. Krause, P. Palinginis, H. Neuhaus
Silicon Cells
Subtopic: Homojunction Solar Cells
Event: 35th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2BO.3.3
366 - 370
ISBN: 3-936338-50-7
Paper DOI: 10.4229/35thEUPVSEC20182018-2BO.3.3
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The change of bulk excess charge carrier lifetime of silicon wafers along the processing stages of PERC solar cellsis investigated. As PERC solar cells efficiency improve currently very fast the material quality and its change during processing is becoming more and more important. We perform this work on Ga-doped Czochralski grown wafers which are not affected by boron-oxygen related light induced degradation. The bulk carrier lifetime reduces from an initial high level during the PERC process monitored after phosphorous diffusion and after the application of dielectric layers. However, after screen-printing and the following co-firing step the bulk carrier lifetime improves.A balanced temperature management during cell processing of temperature ramps, peak temperatures and times is necessary for high efficiency PERC cells which benefit more and more of high bulk carrier lifetime.