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Fully Inorganic Charge Transport Layers for High Efficiency Perovskite Solar Cells and Modules
A. Walter, S.-J. Moon, B. Niesen, B.A. Kamino, J.J. Diaz Leon, G. Cattaneo, A. Paracchino, Q. Jeangros, S. Nicolay, C. Ballif
Non Silicon-Based Thin Film Photovoltaics
Subtopic: Perovskite, Organic and Dye-Sensitised Devices
Event: 35th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BV.3.16
ISBN: 3-936338-50-7
0,00 EUR
Document(s): poster


Thin film solar cells based on perovskite absorbers have known an unprecedented surge in efficiency over the past years. Reaching efficiencies over 22% in small area devices, they are close to the best commercial thin film technologies. However, the perovskite technology still has to overcome two main challenges in order to be seen as a credible and viable alternative or complement to the mainstream PV technologies: long term stability and upscaling using industrially relevant techniques. Among others, the charge transport layers used in the most efficient perovskite devices have raised stability concerns. Notably, spiro-OMeTAD, an organic p-type small molecule, has been widely used as hole transport material. However, this material is prone to thermal[1] and light-induced[2] degradation, hindering its deployment in commercially relevant devices. To overcome the stability issues inherent to organic charge transport layers, we propose here fully inorganic charge selective layers for application in perovskite photovoltaic devices. By reversing the polarity of the cells (p-i-n instead of the commonly used n-i-p configuration), we are able to completely avoid the use of spiro-OMeTAD, replacing it by NiO. Moreover, the use of magnetron sputtering as the deposition technique for the hole transport layer allows us to deposit very conformal and compact layers over large areas, making it suitable for module applications.