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Modified Three-Stage Coevaporation Process for High Efficiency High-Ga Content CIGS Solar Cells
W. Li, J. Zheng, S. Xu, B. Yang, S. Shi, L. Yao, X. Li, M. Chen, G. Zhong, W. Li, Y. Feng, H. Luo, C. Yang
EBIC, Thin Film Solar Cell, Cu(In,Al)Se2, SEM
Perovskites, other Non-Silicon-Based Photovoltaics and Multi-Junction Devices
Subtopic: CI(G)S, CdTe and Related Thin Film Solar Cells
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3AO.9.5
608 - 610
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-3AO.9.5
0,00 EUR
Document(s): paper


The bottleneck of obtaining high efficiency CIGS thin film solar cells is that their bandgap must be smaller than 1.2 eV. Wider bandgap thin film CIGS solar cells with high Ga content are of great interests. However, the leading challenge is that the Ga will accumulate at the back side of CIGS absorber. In this study, the influences of the Ga content on the performance and morphology of the CIGS solar cells are investigated. In addition, the current collection properties of the CIGS solar cells is studied by SEM-EBIC. The performances and the current collection length of the high-Ga content (GGI=42%) CIGS solar cells are improved by the modified three stage process. The open circuit voltage (VOC) of was improved by 30 mV by the modified three stage process with efficiency improved from 16.5% to 19.2% without antireflection coatings. The efficiency of the high-Ga CIGS solar cells would exceed 20% if AR coating was deposited on top or the solar cells.