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A Simplified Model to Simulate Passivating & Selective Hole-Collecting Contacts
G.J.M. Janssen, M.T.S.K. Ah Sen, P.C.P. Bronsveld
Contact, Passivation, Simulation, Silicon (Si) Solar Cells, Carrier Selectivity
Silicon Materials and Cells
Subtopic: Characterisation & Simulation of Si Cells
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DO.6.3
280 - 285
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-2DO.6.3
0,00 EUR
Document(s): paper


A simplified model is presented that can be used in simulations to describe a wide range of passivating & selective contacts with different interfacial layers, such as a tunneling oxide, an intrinsic a-Si layer or an oxide with a high pinhole density. The interfacial layer is described by a c-Si(i) layer with a low, effective charge carrier mobility. We present simulations using this model that show that a work function above 5.2 eV can be sufficient to make a good hole selective contact on Si. However, the lower the work function, the more care must be taken to optimize the interfacial layer to find a good balance between electron and hole transport.