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Tailoring the Properties of Indium Sulfide by Doping
M. Mathew
Buffer Layer, PV Materials, Impurities, Thin Film Solar Cell, In2S3
Perovskites, other Non-Silicon-Based Photovoltaics and Multi-Junction Devices
Subtopic: CI(G)S, CdTe and Related Thin Film Solar Cells
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BV.1.14
661 - 663
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-3BV.1.14
0,00 EUR
Document(s): paper


In the present work, structural, optical and electrical properties of indium sulfide are tuned by specific and controlled doping. Silver, tin, copper and chlorine were used as the doping elements. In2S3 thin films for the present study were prepared using a simple and low cost “Chemical Spray Pyrolysis (CSP)” technique. This technique is adaptable for large-area deposition of thin films in any required shape and facilitates easiness of doping and/or variation of atomic ratio. It involves spraying a solution, usually aqueous, containing soluble salts of the constituents of the desired compound onto a heated substrate. Doping process was optimized for different doping concentrations. On optimizing doping conditions, we tuned the structural, optical and electrical properties of indium sulfide thin films making them perform as an ideal buffer layer.