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Fired Hydrogenated AZO Layers: A New Passivation Approach for High Temperature Passivated Contact Solar Cells
E. Bruhat, T. Desrues, D. Blanc-Pélissier, B. Martel, R. Cabal, S. Dubois
Annealing, Passivation, TCO Transparent Conducting Oxides, Silicon (Si) Solar Cells
Silicon Materials and Cells
Subtopic: Homojunction Solar Cells
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CO.9.1
208 - 213
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-2CO.9.1
0,00 EUR
Document(s): paper


Polysilicon (poly-Si) based passivating contacts are promising to improve silicon solar cells conversion efficiency. However, the use of Transparent Conductive Oxides (TCO) has to be considered to improve lateral conductivity while maintaining good optical and surface passivation properties. In this work different Aluminum-doped Zinc Oxide (AZO) based contacts have been investigated after high temperature firing steps to contact Phosphorus-doped poly-Si layers. Good conductivities of the AZO layer have been maintained thanks to aluminum oxide capping layers. Contact resistivity below 100 mΩ.cm2 at the AZO/n+ poly-Si interface and stable implied open circuit voltage values (> 715 mV) have been obtained for firing temperatures from 550°C to 850°C. Moreover, integration of the developed AZO stacks on standard p+ boron-diffused homojunctions showed promising results in terms of surface passivation. This novel high temperature contacting method via indium-free TCOs, is particularly interesting for the industrial integration of poly-Si based passivated contacts but also provides new perspectives for advanced homojunction solar cells.