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‘HJT 2.0’ Performance Improvements and Cost Benefits for Silicon Heterojuntion Cell Production
D.L. Bätzner, P. Papet, B. Legradic, D. Lachenal, R. Kramer, T. Kössler, L. Andreetta, N. Holm, W. Frammelsberger, B. Strahm
Heterojunction, ITO, TCO, SiN, COO, Solar Cell Production, bi-layer, HJT2.0
Silicon Materials and Cells
Subtopic: Manufacturing & Production of Si Cells
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2EO.1.3
300 - 303
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-2EO.1.3
0,00 EUR
Document(s): paper


Silicon heterojunction technology (HJT) for mass production frequently meets reservations related to the performance and cost constraints the standard TCO on the cell front side namely indium tin oxide (ITO) constitutes. We address and mitigate these concerns with our HJT 2.0 concept in which the front electrode is made of a bi-layer of much thinner ITO that is supplemented by a silicon nitride (SiN) layer. This cell concept was developed to yield an improvement in device efficiency of typically 0.2% absolute due to increased cell current and a considerable cost saving of around 0.5ct$/Wp with respect to cost of ownership (CoO) for the module.