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Characterization of Fire-Through Pastes on LPCVD Based Passivating Contacts in MonoPolyTM Solar Cells
P. Padhamnath, J.K. Buatis, N. Nandakumar, N. Nampalli, N. Balaji, V. Shanmugam, A.G. Aberle, S. Duttagupta
Passivation, Recombination, Screen Printing, Passivating Contact, Metallization
Silicon Materials and Cells
Subtopic: Manufacturing & Production of Si Cells
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2EO.1.5
309 - 313
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-2EO.1.5
0,00 EUR
Document(s): paper


In this work we have characterized screen-printed passivating contacts formed by different commercially available fire-through pastes on phosphorus doped (n+) polysilicon (poly-Si) layers at the rear side of monoPolyTM solar cells. Extremely low recombination current density under metal contacts (J01,metal) of 35-45 fA/cm2 and excellent contact resistivity (c) values of ~1.3 mΩ-cm2 are obtained for two different thicknesses of poly-Si (150 nm and 250 nm) used in this work. We observe although the metal induced recombination increases with reducing thickness of the poly-Si layer, thinner poly-Si layers can lead to higher efficiencies on account of reduced parasitic absorption leading to higher short-circuit current. A champion efficiency of 22.6% having 5 busbars is reported for monoPolyTM cells with the best performing FT paste on large area (244.3 cm2) commercially available Czochralski grown Si wafers.