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Building Blocks Development for Defect-Free Growth of GaAs on Silicon for Tandem Solar Cells
D. Mencaraglia, C. Renard, J.P. Connolly, N. Cherkashin, G. Hallais, A. Jaffré, J. Alvarez, G. Chau, L. Vincent, J.-P. Kleider, F. Hamouda, D. Bouchier
Epitaxy, Multijunction Solar Cell, Silicon (Si), III-V Semiconductors
Perovskites, other Non-Silicon-Based Photovoltaics and Multi-Junction Devices
Subtopic: Tandems
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BV.2.49
753 - 756
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-3BV.2.49
0,00 EUR
Document(s): paper, poster


The monolithic integration on silicon of GaAs, and more generally of III-V semiconductors, is a very attractive and promising route for the production of high efficiencies multijunctions devices in the manner of those developed for space applications on germanium, but at a much lower cost suitable for terrestrial PV applications. The purpose of this paper is to present the building blocks we have developed for defect-free growth of GaAs on silicon for tandem solar cell applications. This will be addressed from the technological point of view as well as from design, modelling and characterization perspectives. Preliminary work has allowed the identification of critical technological bottlenecks, following which solution routes have been developed as will be presented and discussed. The resulting design for a GaAs/Si tandem solar cell will then be described.