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Investigating the Effect of Interstitial Fe Impurity Contamination on n-Type Cz-Silicon Material for High Efficiency Solar Cell Processing
A. Hajjiah, H. Badran, I. Gordon, J. Szlufcik, J. Poortmans, J. John
Lifetime, Crystalline Silicon, Silicon Solar Cell(s), n-Type
Silicon Materials and Cells
Subtopic: High Temperature Route for Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.18
512 - 515
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-2DV.3.18
0,00 EUR
Document(s): paper


In this work the impact of iron contamination on n-type cz-silicon material is investigated mimicking a silicon solar cell manufacturing process flow. The Fe impurities are deposited on the wafer surface and driven in by a high temperature step providing a bulk concentration range varying from 3.5e12/cm3 to 2.7e14/cm3. Effective minority carrier lifetimes are measured and fitted to the curve derived from SRH theory. Capture cross section for interstitial Fe could be extracted to be 6.45e-17 cm/s +/- 2.23e-17 cm/s which is in good consensus with literature values. The achieved values are used in QUOKKA to perform silicon solar cell simulations. For very low bulk Fe concentrations of 2.5e12/cm3 (surface concentration of 6e10/cm2) a degradation of the solar cell efficiency of 10% relative is calculated.