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Challenges for Efficient Integration of SHJ Based Solar Cells in Shingle Module Configuration
S. Harrison, A. Bettinelli, B. Portaluppi, V. Giglia, C. Carrière, A. Sekkat, D. Munoz-Rojas, V. Barth
Heterojunction, Simulation, Shingle, Wafer Resistivity
Silicon Materials and Cells
Subtopic: Low Temperature Route for Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2BO.5.5
223 - 227
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-2BO.5.5
0,00 EUR
Document(s): paper, presentation


Half-cell and/or Shingle will soon become reference configuration for next generation of modules, especially with the continuous increase of wafer size. With this paper, we propose to review current progresses made in understanding and optimization of the fabrication of these specific SHJ Half-cell/Shingle cells. By adapting the production line to the Shingle configuration and corresponding additional process steps, we adress in particular the following critical points: metallization and edge losses mitigation. We do not limit our analysis to existing process optimization (laser power impact, single print metallization limitation), but propose as well additional integration approaches that could counter-balance or limit the parasitic defects generated during the cleavage process (adapted initial wafer specifications, alternative TLS cleavage, post process curing steps…etc). Finally, first module integration results obtained are presented, with promising output powers and excellent reliability already demonstrated.