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Aspects of Gallium Doping for PERC Solar Cells
G. Fischer, F. Wolny, H. Neuhaus, M. Müller
Doping, Gallium, Bulk Lifetime, PERC Solar Cells, Silicon Materials, Cast Mono
Silicon Materials and Cells
Subtopic: Manufacturing & Production of Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CO.13.2
238 - 241
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-2CO.13.2
0,00 EUR
Document(s): paper, presentation


This study addresses the practical advantages and disadvantages of gallium-doped silicon for use in PERC solar cells. In a statistical analysis concerning the bulk recombination of various monocrystalline materials, it is shown that the Ga doping has advantages not only in Cz but also in cast-mono silicon material. Subsequently, the behavior of Ga-doped Si wafers concerning different degradation mechanisms is investigated. It is shown that the material properties change significantly during the PERC cell process. Nevertheless, LID and LeTID mechanisms are significantly reduced in all Ga-doped materials. A discussion of the Fe acceptor pairing shows that this must be considered especially in the evaluation of IV measurements. Finally, the less favorable specific resistance profile over ingot height is discussed for the Ga doping with resulting limitations and countermeasures. In conclusion, taking into account the examined aspects, the high potential of Ga-doped silicon wafers is compared to all other investigated materials in current industrial PERC cell processes by numerical device simulation.