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Silicon Wafers with a Thickness below 130-Micrometers in Mass Production of Heterojunction Solar Cells
I. Nyapshaev, K. Emtsev, D. Andronikov, A. Abramov, A. Ivanov, V. Tarasov, D. Saykin, A. Dubrovskiy, P. Ishmuratov, I. Shakhray
Testing, Wafer Thickness, Mechanical Load, HJT, Production
Silicon Materials and Cells
Subtopic: Low Temperature Route for Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.24
529 - 531
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-2DV.3.24
0,00 EUR
Document(s): paper


In present work, we investigate the possibility to reduce wafer thickness to less than 130 mkm in mass production of Si-HJT cell and modules. It is shown that thinning leads to reduction of the Isc current by 0.1 A and increase of the Voc by about 2-3 mV as compared to the standard wafer thickness. This reduces the overall cell efficiency by about 0.2%abs. At the same time, on the module level, use of thinner wafers leads to power gain of about 1%. We show that that glassglass HJT modules technology are preferred over glass-backsheet when using wafers less than 130 mkm thick in terms of mechanical and climatic stability.