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Single-Step Periodic Photoelectrochemical Texturing of Silicon for Photovoltaics
N. Avishan, A. Akbiyik, E. Yüce, A. Bek
c-Si, Etching, Laser Processing, Surface Texturing, Silicon (Si) Solar Cells
Silicon Materials and Cells
Subtopic: High Temperature Route for Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.48
549 - 553
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-2DV.3.48
0,00 EUR
Document(s): paper, poster


Compared to antireflection coatings, surface texturing achieved by wet and dry etching methods is an efficient and long-lasting technique for reflection reduction by enhancing light trapping. In this work, laser-assisted wet chemical etching, or more commonly, photoelectrochemical etching (PEC-etching) is introduced as an alternative texturing technique with high application potential to thin silicon (Si) wafers and multi-crystalline Si solar cells. In this method, high power laser radiation is used to create nanoholes. By utilizing a digital micro-mirror device, it is possible to texture the surface in periodic patterns to get better optical performance without compromising electrical performance. Here, full and partial surface texturing achieved by structured light PEC-etching is reported. The SEM images and reflectance measurements are reported for different laser powers. The purpose is to keep the electrical properties as high as possible by keeping some regions smooth while the nanostructures on the etched regions will improve the optical properties by light trapping. The lowest average measured reflectance value for fully textured Si and the periodically textured Si was reported to be 9% at a laser power of 650 mW and 15% at a laser power of 350 mW, respectively.