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Boosting Mobility in Highly Doped Zinc Oxide Films by Post Deposition Thermal Treatment
F. Ruske, M. Roczen, J. Hüpkes, S. Gall, B. Rech
Annealing, Electrical Properties, TCO, Zinc Oxide
Thin Films Solar Cells
Subtopic: Thin Film Crystalline Silicon Solar Cells and Wafer Equivalents
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 3CO.6.6
2353 - 2356
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-3CO.6.6
0,00 EUR
Document(s): paper


Aluminum-doped zinc oxide are a representative for a transparent and conducting oxide thin film (TCO) and is commonly used as front contact in chalcopyrite and amorphous/microcrystalline silicon solar cells. Optimum optical and electrical properties for this application are obtained for moderate doping levels and high mobilities. State-of-the-art films, preferably deposited by magnetron sputtering or low pressure chemical vapor deposition, exhibit mobilities around 40 cm2/Vs. Post-deposition thermal treatment will usually lead to a strong increase of resistivity. If the films are capped by thin silicon layers, however, the degradation of electrical properties can be prevented and a significant increase in mobility can be obtained. The highest mobility reached in this study is 67 cm2/Vs.