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Heterojunction Silicon Solar Cells Incorporating Unpatterned MoOx and LiFx/Al on Wet-Chemically Processed Silicon Surfaces
K. Tsoi, D. Türkay, E. Donercark, E.H. Çiftpinar, M. Ghasemi, R. Turan, S. Yerci
Silicon Oxide, Monocrystalline Silicon, Full Heterojunction
Silicon Materials and Cells
Subtopic: Low Temperature Route for Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.51
554 - 559
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-2DV.3.51
0,00 EUR
Document(s): paper, poster


Among carrier selective layers that can be thermally evaporated, MoOx and Al-capped LiFx have shown promising performance. Here, we investigate the electrical performance of hole-selective MoOx and electron-selective LiFx/Al on (n)c-Si surfaces with wet-chemically grown SiOx by RCA-1 and RCA-2, without employing additional passivating layers such as intrinsic amorphous silicon. We analyze the effect of these chemically-grown oxides on the contact resistivity of (n)c-Si/LiFx/Al and passivation of (n)c-Si/MoOx interfaces, and achieve the highest quality for both interfaces with RCA-2 grown oxide. For a double side polished, 2x2 cm2 (n)c-Si solar cell, we demonstrate an open-circuit voltage > 615 mV and a fill factor > 78 %. For a double-side pyramid textured cell, a power conversion efficiency (PCE) of 15.72 % is demonstrated, which is the highest reported PCE for the topology analyzed in this work. Furthermore, we perform a cost analysis to identify the requirements for this device structure to be competitive with devices utilizing the same carrier-selective layers with additional passivating layers.