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Interplay of IBC Cell's Front Surface Doping, Passivation Quality, and Stability under Ultraviolet Light Exposure
H. Chu, V. Kuruganti, R. Roescu, C. Peter, V.D. Mihailetchi
Surface Passivation, IBC, Si Solar Cell, UV Degradation
Silicon Materials and Cells
Subtopic: High Temperature Route for Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.9
311 - 316
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2DV.3.9
0,00 EUR
Document(s): paper, poster


We study the UV stability of lightly doped n- type Si surfaces with a sheet resistance of 154 Ohm/sq, 935 Ohm/sq and 1480 Ohm/sq. These surfaces are passivated by a layer stack consisting of thermal SiO2 and PECVD SiNx and the resulting J0 is in the range of 10 to 40 fA/cm2. We applied these lightly diffused surfaces for the FSFs of IBC cells, and for symmetric n+/n/n+ lifetime samples. We found out that although the 6-inch IBC cells with lighter doped FSFslead to better Voc, they showed more degradation after the UV exposure test (dose of 45 kWh/m2, equivalent to three times of IEC test). The degradation is likely caused by the increase of front surface recombination. Lastly, we summarize several UV degradation test results for both p- and n-type surfaces, based on which it seems that it is advisable to check the UV stability for not only the IBC cells but also other cell concepts which have a lightly doped or even undoped front surface.