Search documents

Browse topics

Document details

Production and Characterization of n-Type Ingots and Wafers that are Produced of Industrial Standards
O. Aydin, M. Konyar, H. Koç, E. Uçar, N. Yıldırım, F.S. Yıldırım, M. Çetmeli, F. Es
Silicon Materials and Cells
Subtopic: Feedstock, Crystallisation, Wafering, Defect Engineering
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.4.6
ISBN: 3-936338-78-7
0,00 EUR
Document(s): poster


P-type In this study, phosphorus doped n-type wafers were produced in Kalyon PV Factory of Solar Technologies. Ingots were obtained from Czochralski grown ingots with a resistivity gradient between 0.28 – 1.46 Ω-cm, a lifetime gradient between 502-5600 μs and low interstitial oxygen and substitutional carbon content, below 16 and 0.1 ppm respectively. From the wafers, zebra cells with %21,3 and %22,2 efficiency and mini modules with 5.120 W and 5382 W power were produced.