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Title:
 
Production and Characterization of n-Type Ingots and Wafers that are Produced of Industrial Standards
 
Author(s):
 
O. Aydin, M. Konyar, H. Koç, E. Uçar, N. Yıldırım, F.S. Yıldırım, M. Çetmeli, F. Es
 
Topic:
 
Silicon Materials and Cells
Subtopic: Feedstock, Crystallisation, Wafering, Defect Engineering
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.4.6
ISBN: 3-936338-78-7
 
Price:
 
 
0,00 EUR
 
Document(s): poster
 

Abstract/Summary:


P-type In this study, phosphorus doped n-type wafers were produced in Kalyon PV Factory of Solar Technologies. Ingots were obtained from Czochralski grown ingots with a resistivity gradient between 0.28 – 1.46 Ω-cm, a lifetime gradient between 502-5600 μs and low interstitial oxygen and substitutional carbon content, below 16 and 0.1 ppm respectively. From the wafers, zebra cells with %21,3 and %22,2 efficiency and mini modules with 5.120 W and 5382 W power were produced.