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22.8% Si-Solar Cells Using Sputtered polySi(n) Passivating Contacts and Direct Screen-Printing Metallization
J.J. Diaz Leon, A. Ingenito, C. AllebĂ©, S. Libraro, C. Ballif, S. Nicolay
Silicon Materials and Cells
Subtopic: High Temperature Route for Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.3
ISBN: 3-936338-78-7
0,00 EUR
Document(s): poster


Passivating contacts based on a thin silicon oxide/doped polysilicon stack and activated during a high temperature process (polySi) are increasingly adopted in industry thanks to their compatibility with mainstream solar cell processing and high performance potential. Efficiencies up to 24.9% have been shown for n-type poySi integrated at the rear side of PERT-like solar cells by solar cell manufacturers [1]. At this point, in-situ oxide along with single-sided deposition and doping are critical towards the industrialization of polySi-based solar cells. Herein, it will be shown how sputtering can be a high-throughput, low-cost solution for n-type polySi deposition, and the compatibility of sputtered polySi layers with direct metallization. PERT-like solar cells with sputtered n-type polySi at the back and contacted by direct metallization will be presented, showcasing the potential of this technology.