Title: |
Pouring the Remaining Melt as a Method to Reduce the Red-Zone in the Top Region of mc-Silicon Ingots |
Author(s): |
T. Bähr, M. Ghosh, M. Hamacher, C. Kranert, C. Reimann |
Keywords: |
Diffusion, Minority Carrier Lifetime, Multicrystalline Silicon, Crystallization, Red Zone |
Topic: |
Silicon Materials and Cells |
Subtopic: | Feedstock, Crystallisation, Wafering, Defect Engineering |
Event: | 38th European Photovoltaic Solar Energy Conference and Exhibition |
Session: | 2DV.4.2 |
Pages: |
334 - 338 |
ISBN: | 3-936338-78-7 |
Paper DOI: | 10.4229/EUPVSEC20212021-2DV.4.2 |
Price: |
0,00 EUR |
Document(s): |
paper |